fdms031 2 s n-channel powertrench ? syncfet tm ?2 0 11 fairchild semiconductor corporation fdms031 2 s rev. d www.fairchildsemi.com 1 july 20 11 fdms031 2 s n-channel powertrench ? syncfet tm 30 v, 42 a, 4. 9 m : features ? max r ds(on) = 4. 9 m : at v gs = 10 v, i d = 18 a ? max r ds(on) = 5.8 m : at v gs = 4.5 v, i d = 14 a ? advanced package and silicon combination for low r ds(on) and high efficiency ? syncfet schottky body diode ? msl1 robust package design ? 100% uil tested ? rohs compliant general description the fdms031 2 s has been designed to minimize losses in power conversion application. advancements in both silicon and package technologies have been combined to offer the lowest r ds(on) while maintaining excellent switching performance. this device has the added benefit of an efficient monolithic schottky body diode. applications ? synchronous rectifier for dc/dc converters ? notebook vcore/ gpu low side switch ? networking point of load low side switch ? desktop mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking an d ordering information symbol parameter ratings units v ds drain to source voltage 30 v v gs gate to source voltage (note 4) 20 v i d drain current -continuous (package limited) t c = 25 c 42 a -continuous (silicon limited) t c = 25 c 83 -continuous t a = 25 c (note 1a) 19 -pulsed 90 e as single pulse avalanche energy (note 3) 60 mj p d power dissipation t c = 25 c 46 w power dissipation t a = 25 c (note 1a) 2.5 t j , t stg operating and storage junction temperature range -55 to +150 c r t jc thermal resistance, junction to case 2.7 c/w r t ja thermal resistance, junction to ambient (note 1a) 50 device marking device package reel size tape width quantity fdms031 2 s fdms031 2 s p ower 56 3 1 2 mm 3000 units 4 3 2 1 5 6 7 8 power 56 d d d d s s s g d d d d g s s s pin 1 bottom top www.datasheet.net/ datasheet pdf - http://www..co.kr/
fdms031 2 s n-channel powertrench ? syncfet tm fdms031 2 s rev.d www.fairchildsemi.com 2 electrical characteristics t j = 25 c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 1 ma, v gs = 0 v 30 v ' bv dss ' t j breakdown voltage temperature coefficient i d = 10 ma, referenced to 25 c 18 mv / c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 500 p a i gss gate to source leakage current, forward v gs = 20 v, v ds = 0 v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 1 ma 1.2 1.9 3.0 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = 10 ma, referenced to 25 c -5 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 18 a 3.6 4. 9 m : v gs = 4.5 v, i d = 14 a 4.7 5.8 v gs = 10 v, i d = 18 a, t j = 125 c 5 6.2 g fs forward transconductance v ds = 5 v, i d = 18 a 97 s (note 2) dynamic characteristics c iss input capacitance v ds = 15 v, v gs = 0 v, f = 1 mhz 2120 2820 pf c oss output capacitance 735 975 pf c rss reverse transfer capacitance 90 135 pf r g gate resistance 1.1 2.2 : switching characteristics t d(on) turn-on delay time v dd = 15 v, i d = 18 a, v gs = 10 v, r gen = 6 : 12 21 ns t r rise time 510ns t d(off) turn-off delay time 28 44 ns t f fall time 410ns q g total gate charge v gs = 0 v to 10 v v dd = 15 v, i d = 18 a 33 46 nc q g total gate charge v gs = 0 v to 4.5 v 15 22 nc q gs gate to source gate charge 6.5 nc q gd gate to drain miller charge 4.0 nc drain-source diode characteristics v sd source to drain diode forward voltage v gs = 0 v, i s = 2 a (note 2) 0.48 0.7 v v gs = 0 v, i s = 18 a (note 2) 0.80 1.2 t rr reverse recovery time i f = 18 a, di/dt = 300 a/ p s 26 42 ns q rr reverse recovery charge 26 42 nc notes : 1. r t ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r t jc is guaranteed by design while r t ca is determined by the user's board design. 2. pulse test: pulse width < 30 0 p s, duty cycle < 2.0%. 3. e as of 60 mj is based on starting t j = 25 c, l = 1 mh, i as = 11 a, v dd = 27 v, v gs = 10 v. 100% test at l = 0.3 mh, i as = 16 a. 4. as an n-ch device, the negative vgs rating is for low duty cycle pulse occurrence only. no continuous rating is implied. a. 50 c/w when mounted on a 1 in 2 pad of 2 oz copper. b. 125 c/w when mounted on a minimum pad of 2 oz copper. www.datasheet.net/ datasheet pdf - http://www..co.kr/
FDMS0312S n-channel powertrench ? syncfet tm fdms031 2 s rev.d www.fairchildsemi.com 3 typical characteristics t j = 25 c unless otherwise noted figure 1. 0.0 0.5 1.0 1.5 2.0 0 30 60 90 v gs = 3.5 v v gs = 10 v v gs = 3 v v gs = 4 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 4.5 v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 03 06 09 0 0 2 4 6 8 10 12 v gs = 4 v v gs = 4.5 v normalized drain to source on-resistance i d , drain current (a) v gs = 10 v v gs = 3.5 v v gs = 3 v pulse duration = 80 p s duty cycle = 0.5% max n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 i d = 18 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature f i g u r e 4 . o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 1234 0 30 60 90 t j = 125 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 100 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current 24681 0 2 4 6 8 10 12 t j = 125 o c i d = 18 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max www.datasheet.net/ datasheet pdf - http://www..co.kr/
fdms031 2 s n-channel powertrench ? syncfet tm fdms031 2 s rev.d www.fairchildsemi.com 4 figure 7. 0 5 10 15 20 25 30 35 0 2 4 6 8 10 i d = 18 a v dd = 15 v v dd = 10 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 20 v gate charge characteristics figure 8. 0.1 1 10 30 50 100 1000 3000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 1 10 30 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 30 60 90 limited by package r t jc = 2.7 o c/w v gs = 4.5 v v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e operating area 0.01 0.1 1 10 100200 0.01 0.1 1 10 100 300 100 p s 1 s dc 100 ms 10 ms 1 ms 10 s i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 125 o c/w t a = 25 o c figure 12. 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.5 1 10 100 1000 3000 v gs = 10 v p ( pk ) , peak transient power (w) t, pulse width (sec) single pulse r t ja = 125 o c/w t a = 25 o c s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25 c unless otherwise noted www.datasheet.net/ datasheet pdf - http://www..co.kr/
fdms031 2 s n-channel powertrench ? syncfet tm fdms031 2 s rev.d www.fairchildsemi.com 5 figure 13. junction-to-ambient tr ansient thermal resp onse curve 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.0001 0.001 0.01 0.1 1 single pulse r t ja = 125 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 t 1 t 2 tt 2tt www.datasheet.net/ datasheet pdf - http://www..co.kr/
fdms031 2 s n-channel powertrench ? syncfet tm fdms031 2 s rev.d www.fairchildsemi.com 6 syncfet schottky body diode characteristics fairchild?s syncfet process embeds a schottky diode in parallel with powertrench mosfet. this diode exhibits similar characteristics to a discrete external schottky diode in parallel with a mosfet. figure 14 shows the reverses recovery characteristic of the fdms031 2 s. schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. this will increase the power in the device. typical characteristics (continued) figure 14. fdms031 2 s syncfet body diode reverse recovery characteristic figure 15. syncfet body diode reverses leakage versus drain-source voltage 0 5 10 15 20 25 30 10 -6 10 -5 10 -4 10 -3 10 -2 t j = 125 o c t j = 100 o c t j = 25 o c i dss , reverse leakage current (a) v ds , reverse voltage (v) 0306090120150 -5 0 5 10 15 20 di/dt = 300 a/ p s current (a) time (ns) www.datasheet.net/ datasheet pdf - http://www..co.kr/
fdms031 2 s n-channel powertrench ? syncfet tm fdms031 2 s rev.d www.fairchildsemi.com 7 dimensional outline and pad layout www.datasheet.net/ datasheet pdf - http://www..co.kr/
trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditio ns, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform wh en properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? accupower? auto-spm? ax-cap?* bitsic ? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motion-spm? mwsaver? optihit? optologic ? optoplanar ? ? pdp spm? power-spm? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* the power franchise ? the right technology for your success? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * serdes? uhc ? ultra frfet? unifet? vcx? visualmax? xs? tm ? tm tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing dela ys. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above . products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping th is practice by buying direct or from authorized distributors. rev. i55 fdms031 2 s n-channel powertrench ? syncfet tm fdms031 2 s rev.d www.fairchildsemi.com 8 www.datasheet.net/ datasheet pdf - http://www..co.kr/
|
